| Item Name | Microcircuit Memory |
| INC Code | 41015 |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-102-3846 (011023846) |
| NCB Code | USA (01) |
| Manufacturer | Advanced Micro Devices Inc, Bae Systems Inc, Boeing Company The, Dla Land And Maritime, E2v Inc, Military Specifications, Lockheed Martin Corporation, Fairchild Semiconductor Corp, Lansdale Semiconductor Inc, Intersil Corporation, Intel Corporation, General Dynamics Information Systems, Northrop Grumman Systems Corporation, Raytheon Technical Services Company, Raven Electronics Corporation, National Semiconductor Corporation, Philips Semiconductors Ltd, Mmi Amd |
| Associated Parts Numbers of NSN 5962-01-102-3846 | ||||||
|---|---|---|---|---|---|---|
| Part Number | Manufacturer | Item Name | Cage Code | Type | Status | RFQ |
| AMD9214DM | advanced micro devices inc | microcircuit memory | 34335 | A | A | RFQ |
| 9402-00129 | bae systems inc | microcircuit memory | k0656 | F | A | RFQ |
| 477-1336-031 | boeing company the | microcircuit memory | 94756 | A | A | RFQ |
| 477-1768-003 | boeing company the | microcircuit memory | 94756 | A | A | RFQ |
| ROM PROM HEAD 026 | dla land and maritime | microcircuit memory | 16236 | A | A | RFQ |
| 82S141 BJA | e2v inc | microcircuit memory | 0c7v7 | F | A | RFQ |
| 5962-3820802BJA | military specifications | microcircuit memory | 81349 | NSN | Avl | RFQ |
| 7849878P001 | lockheed martin corporation | microcircuit memory | 03538 | A | A | RFQ |
| JM38510/20802BJX | military specifications | microcircuit memory | 81349 | NSN | Avl | RFQ |
| 5962-3820802BJB | military specifications | microcircuit memory | 81349 | NSN | Avl | RFQ |
| 5962-3820802BJX | military specifications | microcircuit memory | 81349 | NSN | Avl | RFQ |
| M38510/20802BJ | military specifications | microcircuit memory | 81349 | NSN | Avl | RFQ |
| 583R350H01 | fairchild semiconductor corp | microcircuit memory | 07263 | A | A | RFQ |
| SL82S141 BJA | lansdale semiconductor inc | microcircuit memory | 58625 | A | A | RFQ |
| IM5625-CJG | intersil corporation | microcircuit memory | 32293 | A | F | RFQ |
| D3624 | intel corporation | microcircuit memory | 34649 | A | A | RFQ |
| 85694600-03 | general dynamics information systems | microcircuit memory | 27963 | A | R | RFQ |
| HM1-7641-5 | intersil corporation | microcircuit memory | 34371 | A | A | RFQ |
| 583R350H01 | northrop grumman systems corporation | microcircuit memory | 97942 | A | A | RFQ |
| M38510/20802BJB | military specifications | microcircuit memory | 81349 | NSN | Avl | RFQ |
| 4004785-01 | raytheon technical services company | microcircuit memory | 36378 | A | R | RFQ |
| MIL-M-38510/208 | military specifications | microcircuit memory | 81349 | NSN | Avl | RFQ |
| M38510/20802BJA | military specifications | microcircuit memory | 81349 | NSN | Avl | RFQ |
| H201-3624-04 | raven electronics corporation | microcircuit memory | 51504 | A | A | RFQ |
| DM54S474J MIL | national semiconductor corporation | microcircuit memory | 27014 | A | A | RFQ |
| N82S141F | philips semiconductors ltd | microcircuit memory | 18324 | A | F | RFQ |
| S82S141I 883B | philips semiconductors ltd | microcircuit memory | 18324 | A | F | RFQ |
| 4004785-08 | raytheon technical services company | microcircuit memory | 36378 | A | R | RFQ |
| 1004487-01 | raytheon technical services company | microcircuit memory | 36378 | A | R | RFQ |
| DM54S474J | national semiconductor corporation | microcircuit memory | 27014 | A | A | RFQ |
| 6341-1J | mmi amd | microcircuit memory | 50364 | A | F | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.02 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND SCHOTTKY AND BIPOLAR AND PROGRAMMABLE AND POSITIVE OUTPUTS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/208/USAF/ GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5962-01-102-3846, 5962011023846 | ||||
| 5962-01-314-5386 (5962013145386) | 5962-01-207-2169 (5962012072169) | 5962-01-289-4709 (5962012894709) | 5962-01-163-9035 (5962011639035) | |
| 5962-01-688-4644 (5962016884644) | 5962-01-218-6131 (5962012186131) | 5962-01-060-6300 (5962010606300) | 5962-01-070-6952 (5962010706952) | |
| 5962-01-226-2483 (5962012262483) | 5962-01-258-7470 (5962012587470) | 5962-01-314-3776 (5962013143776) | 5962-01-473-7599 (5962014737599) | |
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